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#INTERMAG2026

Magnetic Immunity in MRAM: From Perceived Risk to Practical Solutions

Friday, 17 April

1:30 pm – 4:30 pm
Chairs: Jean-Pierre Nozières, CNRS and Daniel Worledge, IBM

Magnetic Random-Access Memories (MRAM) have reached a critical juncture. Following decades of research and development, STT-MRAM is now mature enough for many applications and readily available in fabs, yet, widespread adoption remains elusive. A collective effort is required to counter the fear, uncertainty and doubt (FUD) that any new technology faces. This is particularly true when it comes to Magnetic Immunity. As any magnetic devices, STT-MRAM is sensitive to external magnetic fields, and this is today the major risk perceived by users for large scale deployment.

The aim of this half-day event, organized by SNIA’s MRAM Alliance Special Interest Group, is to discuss Magnetic Immunity in real life conditions, free from rumors and biases. Invited speakers from the whole value chain (users and technology suppliers, industry and academia) will discuss the needs and the solutions, showing how this issue can be managed in most practical situations, provided users follow well-vetted guidelines, procedures and standards.

Beyond the issue of Magnetic Immunity in itself, this symposium will provide attendees with a great example on how powerful a collaborative effort is, how business concerns can be addressed by engineers and scientists and how a deep understanding of very basic science is needed to solve very practical issues.

This session is included in the INTERMAG registration fee. Individuals who wish to attend only this event will need to register free of charge by sending an email with name and affiliation to jean-pierre.nozieres@cnrs.fr

Speakers

  • Ben Schmidt, NxP: MRAM Magnetic Allergies
  • Abhishek Talapatra, Global Foundries: Standby Magnetic Immunity: Evaluation and Mitigation Strategie
  • Jaehoon Kim, Samsung: Enhanced Magnetic Immunity in STT-MRAM via Wafer-Level Magnetic Shielding
  • Siamak Salimy, Hprobe: MRAM Magnetic Immunity Under Control
  • Dan Gopman, NIST: Inoculating Innovation: How Standards Resolve the MRAM Magnetic Immunity Challenge
  • Pedram Khalili, Nortwestern University: Current-induced switching of all-antiferromagnetic tunnel junctions